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ZXTC2062E6 20V, SOT23-6, complementary medium power transistors
Summary
BVCEO > 20 (-20)V BVECO > 5 (-4)V IC(cont) = 4 (-3.5)A VCE(sat) < 50 (-65)mV @ 1A RCE(sat) = 35 (54)m PD = 1.1W
Description
Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP transistors in the SOT23-6 package provides a compact solution for the intended applications
C1
C2
B1
B2
Features
* * * * NPN-PNP combination Very low saturation voltage High gain SOT23-6 package
E1
E2
Applications
* * MOSFET and IGBT gate driving Motor drive
Ordering information
DEVICE ZXTC2062E6TA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000
C1 B1 C2 Top view E1 B2 E2
Device marking
2062
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ZXTC2062E6
Absolute maximum and thermal ratings
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current(c)(f) Peak pulse current Base current Power dissipation at TA =25C(a)(f) Linear derating factor Power dissipation at TA =25C(b)(f) Linear derating factor Power dissipation at TA =25C(b)(g) Linear derating factor Power dissipation at TA =25C(c)(f) Linear derating factor Power dissipation at TA =25C(d)(f) Linear derating factor Operating and storage temperature range Thermal resistance junction to ambient(a)(f) Thermal resistance junction to ambient(b)(f) Thermal resistance junction to ambient(b)(g) Thermal resistance junction to ambient(c)(f) Thermal resistance junction to ambient(d)(f) Tj, Tstg RJA RJA RJA RJA RJA PD PD PD PD Symbol VCBO VCEO VECO VEBO IC ICM IB PD Limit 100(-25) (-)20 5(-4) (-)7 4(-3.5) (-)10 (-)1 0.7 5.6 0.9 7.2 1.1 8.8 1.1 8.8 1.7 13.6 -55 to +150 179 139 113 113 73 Unit V V V V A A A W mW/C W mW/C W mW/C W mW/C W mW/C C C/W C/W C/W C/W C/W
NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As above measured at t<5 seconds. (e) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (f) For device with one active die, both collectors attached to a common sink. (g) For device with two active dice running at equal power, split sink 50% to each collector.
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ZXTC2062E6
Thermal characteristics
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ZXTC2062E6
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
Parameter Symbol Min. 100(-25) (-)20 Typ. 140(-55) 35(-45) Max. Unit Conditions V IC = (-)100 A V IC = (-)10mA (*)
Collector-emitter breakdown voltage (base open) Emitter-base breakdown voltage Emitter-collector breakdown voltage (base open) Collector-base cut-off current Emitter-base cut-off current Collector-emitter saturation voltage
BVCEO
BVEBO BVECO
(-)7 5(-4)
(-)8.3 6(-8.5)
V V
IE = (-)100 A IE = (-)100 A
ICBO IEBO VCE(sat)
<1 <1 40(-55) 60(-100) (-190) 140
(-)50 (-)0.5 (-)50 50(-65) 75(-135) (-250) 190 (-1000) 1050 (-900) 900
nA A nA mV mV mV mV mV mV mV mV mV
VCB =100(-25)V VCB =100(-25)V, Tamb= 100C VEB = (-)5.6V IC = (-)1A, IB = (-)100mA(*) IC = (-)1A, IB = (-)20mA(*) IC = (-)2A, IB = (-)40mA(*) (IC = -3.5A, IB = -175mA)(*) IC = 4A, IB = 200mA(*) (IC = -3.5A, IB = -175mA(*)) IC = 4A, IB = 200mA(*) (IC = -3.5A, VCE = -2V(*)) IC = 4A, VCE = 2V(*) IC = (-)10mA, VCE = (-)2V(*) IC = (-)1A, VCE = (-)2V(*) (IC = -3.5A, VCE = -2V(*)) IC = 4A, VCE = 2V(*) (IC = -10A, VCE = -2V(*)) IC = 15A, VCE = 2V(*)
95(-185) 115(-280)
Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio
VBE(sat) VBE(on) hFE
(-925) 940 (-835) 810 280(170) 420(300) (65) 140 (100) 210 (15) 15
300(300) 450(450) 900(900)
Transition frequency Output capacitance Delay time Rise time Storage time Fall time
fT COBO td
tr ts tf
215 (290) 17(21) 68(56) 72(68) 361(158) 64(59) 25(30)
MHz IC = (-)50mA, VCE = (-)10V f = 100MHz pF ns ns ns ns VCC = (-)10V. IC = (-)1A, IB1 = -IB2= (-)10mA. VCB = (-)10V, f = 1MHz(*)
NOTES: (*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. ( ) = PNP
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ZXTC2062E6
NPN electrical characteristics
1
Tamb=25C IC/IB=50 IC/IB=100
0.5
IC/IB=10
0.4
VCE(SAT) (V)
VCE(SAT) (V)
100m
0.3 0.2 0.1 0.0 1m
150C 100C 25C -55C
10m
IC/IB=20 IC/IB=10
1m 1m
10m
IC Collector Current (A)
100m
1
10
10m
VCE(SAT) v IC
IC Collector Current (A)
100m
1
10
VCE(SAT) v IC
1.4
150C
1.2
VCE=2V
700
IC/IB=10 25C -55C
VBE(SAT) (V)
1.0 0.8 0.6 0.4 0.2 0.0 1m
100C 25C -55C
500 400 300 200 100
Typical Gain (hFE)
Normalised Gain
1.2
600
1.0 0.8 0.6
150C 100C
0.4 1m 10m
IC Collector Current (A)
10m
100m
1
10
0
IC Collector Current (A)
100m
1
10
hFE v IC
-55C
VBE(SAT) v IC
1.0
VCE=2V 25C
0.8
VBE(ON) (V)
0.6
150C
0.4
100C
0.2 1m
10m
IC Collector Current (A)
100m
1
10
VBE(ON) v IC
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ZXTC2062E6
PNP electrical characteristics
1
Tamb=25C IC/IB=100
0.6 0.5
IC/IB=10
- VCE(SAT) (V)
- VCE(SAT) (V)
100m
0.4 0.3 0.2 0.1 0.0 1m 10m 100m 1
150C 100C 25C -55C
IC/IB=50
10m
IC/IB=10
IC/IB=20
1m 1m
- IC Collector Current (A)
10m
100m
1
10
VCE(SAT) v IC
- IC Collector Current (A)
10
VCE(SAT) v IC
Typical Gain (hFE)
1.8 1.6
150C
VCE=2V
100C 25C
- VBE(SAT) (V)
1.4 1.2 1.0 0.8
0.6 0.4 -55C 0.2 0.0 1m 10m
- IC Collector Current (A)
100m
1
10
900 850 800 750 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0
1.2 1.0 0.8
IC/IB=10 -55C 25C
Normalised Gain
150C
0.6 0.4 1m
100C
- IC Collector Current (A)
10m
100m
1
10
hFE v IC
VBE(SAT) v IC
1.2
VCE=2V
1.0
-55C
25C
- VBE(ON) (V)
0.8 0.6
150C
0.4 0.2 1m
100C
- IC Collector Current (A)
10m
100m
1
10
VBE(ON) v IC
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ZXTC2062E6
Package outline SOT23-6 Package outline Pad latout details
0.95 0.037 1.06 0.042 2.2 0.087
0.65 0.026
DIM A A1 A2 b C D E E1 L e e1 L Min. 0.90 0.00 0.90 0.35 0.09 2.70 2.20 1.30 0.10 0.95 REF 1.90 REF 0 30 0 Millimeters Max. 1.45 0.15 1.30 0.50 0.26 3.10 3.20 1.80 0.60 Min. 0.354 0.00 0.0354 0.0078 0.0035 0.1062 0.0866 0.0511 0.0039 0.0374 REF 0.0748 REF Inches
mm inches
Max. 0.0570 0.0059 0.0511 0.0196 0.0102 0.1220 0.1181 0.0708 0.0236
30
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTC2062E6
Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user's application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex' terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. Green compliance Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: "Preview" Future device intended for production at some point. Samples may be available "Active" Product status recommended for new designs "Last time buy (LTB)" Device will be discontinued and last time buy period and delivery is in effect "Not recommended for new designs" Device is still in production to support existing designs and production "Obsolete" Production has been discontinued Datasheet status key: "Draft version" This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. "Provisional version" This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. "Issue" This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. Zetex sales offices Europe Zetex GmbH Kustermann-park Balanstrae 59 D-81541 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
(c) 2007 Published by Zetex Semiconductors plc
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